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| to ? 92s 1. emitter 2. collector 3. base to-92s plastic-encapsulate transistors 2SA1515S transistor (pnp) features z general purpose switching application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.05ma,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e =-0.05ma,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a dc current gain h fe v ce =-3v, i c =-0.1a 82 390 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 30 pf transition frequency f t v ce =-5v,i c =-50ma, f=30mhz 50 mhz classification of h fe rank p q r range 82-180 120-270 180-390 symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 0.3 w r ja thermal resistance from junction to ambient 417 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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